MJF45H11 查看數據表（PDF） - New Jersey Semiconductor
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MJF45H11 Datasheet PDF : 2 Pages
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^, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJF45H11
DESCRIPTION
• Low Collector Saturation Voltage-
:VCE<«o=-1.0V(Max.)@lc=-8A
• Fast Switching Speeds
• Complement to Type MJF44H11
APPLICATIONS
• Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators.converters and power amplifier.
*w
' hr
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
123
UNIT
B
Q
V
-I--':
V
2
X
3
PIN 1.DASE
1. COLLECTOR
3.ByllTTER
TO-220F package
-c-
-s~
1 ,-
u;
••
'
-
:
'
!
f
!*
Ic
Collector Current-Continuous
I CM
Collector Current-Peak
Collector Power Dissipation
@Tc=25"C
PC
Collector Power Dissipation
@Ta-25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-10
A
-20
A
36
W
2
150
°C
-55-150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
3.5 r/w
Thermal Resistance, Junction to Ambient 62.5 •c/w
L -~
H
-R-
K
• '0
- W-
J --
mm
DIM MIN MAY
A (4.«5 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 114 11 B
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 285
U 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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