ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
—
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) (1)
ICES
TJ = 25°C
—
—
TJ = 125°C
—
—
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
6.0
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
V(BR)CES
600
700
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) (1) VCE(SAT)
—
2.7
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Cies
—
950
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V)
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
QT
—
75
tfi
—
200
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
E(on)
—
—
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
E(off)
—
—
Diode Forward Voltage (IF = 15 A)
VF
—
1.5
Diode Reverse Leakage Current
Thermal Resistance — IGBT
Thermal Resistance — Diode
(1) 1 cycle = 50 or 60 Hz.
IR
—
—
RθJC
—
—
RθJC
—
—
Max
Unit
± 20
µA
200
µA
2.0
mA
8.0
V
—
V
3.5
V
—
pF
—
nC
350
ns
1.0
mJ
1.0
mJ
2.0
V
50
µA
1.9
°C/W
3.7
°C/W
MOTOROLA
MHPM7B15A60A
3