NDB410B 查看數據表（PDF） - Fairchild Semiconductor
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NDB410B Datasheet PDF : 6 Pages
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Typical Electrical Characteristics
16
V GS= 20V
1 21 0 8.0
7.0
12
6.0
8
4
5.0
0
0
2
4
6
8
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
V = 5V
GS
1.8
1.6
1.4
6.0
7.0
8.0
10
12
20
1.2
1
0.8
0
4
8
12
16
ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.8
ID = 4.5A
2.4
V GS = 10V
2
1.6
1.2
0.8
0.4
-50 -25
0
25
50
75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
2.5
V = 10V
GS
2
TJ = 125°C
1.5
25°C
1
-55°C
0.5
0
0
4
8
12
16
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
10
V DS = 10V
8
T = -55°C
J
25
125
6
4
2
0
2
3
4
5
6
7
8
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.2
VDS= V GS
1.1
I D = 250µA
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Gate Threshold Variation
with Temperature.
NDP410.SAM
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