2SB891F 查看數據表（PDF） - SavantIC Semiconductor

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2SB891F

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB891F

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50µA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50µA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-20V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.5A ; VCE=-3V

fT

Transition frequency

COB

Collector output capacitance

IC=-0.5A ; VCE=-5V;f=30MHz

IE=0; f=1MHz ; VCB=-10V

MIN TYP. MAX UNIT

-32

V

-40

V

-5

V

-0.5 -0.8

V

-1.0 µA

-1.0 µA

82

390

100

MHz

50

pF

hFE-2 Classifications

P

Q

R

82-180 120-270 180-390

2

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