2SB1389 查看數據表（PDF） - New Jersey Semiconductor

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2SB1389

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington PowerTransistor

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25mA; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage

lc=-0.1mA;lE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; lc= 0

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -2A; IB= -4mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -4A; IB= -40mA

VBE(sat)-1 Base-Emitter Saturation Voltage

lc= -2A; IB= -4mA

VBE(sat)-2 Base-Emitter Saturation Voltage

|c= _4A; IB= -40mA

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

ICEO

Collector Cutoff Current

VCE= -50V; RBE= °°

PIPE

DC Current Gain

\c= -2A; VCE= -3V

VECF

C-E Diode Forward Voltage

IF=4A

2SB1389

MIN TYP. MAX UNIT

-60

V

-60

V

-7

V

-1.5

V

i

-3.0

V

-2.0

V

-3.5

V

-10

uA

-10

uA

1000

20000

3.0

V

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