2SB1253 查看數據表（PDF） - New Jersey Semiconductor
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2SB1253 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage., lc= -5A;IB= -5mA
VsEfsat) Base-Emitter Saturation Voltage
lc= -5A; !B= -5mA
ICBO
Collector Cutoff Current
VCB=-130V; IE=0
ICEO
Collector Cutoff Current
VCE=-110V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
IC=-1A;VCE=-5V
hlFE-2
DC Current Gain
lc= -5A; VCE= -5V
fr
Current-Gain—Bandwidth Product IC=-0.5A;VCE=-10V
Switching Times
ton
Turn-on Time
Utg
Storage Time
tf
Fall Time
lc= -5A;lBi= -\B2= -5mA,
Vcc -50V,
• hFE-2 Classifications
Q
P
5000-15000 8000-30000
2SB1253
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-100
MA
-100
MA
-100
MA
2000
5000
30000
20
MHz
0.9
Ms
2.5
Ms
1.7
Ms
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