2SD2444K(RevA) 查看數據表（PDF） - ROHM Semiconductor

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2SD2444K
(Rev.:RevA)

Power Transistor (15V, 1A)

ROHM Semiconductor 

Transistors

zElectrical characteristic curves

100

75

50

25

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Grounded emitter output

characteristics

2SD2444K

1

500m

200m

Ta=125°C

25°C

100m

−40°C

50m

Ta=25°C

VCE=2V

20m

10m

5m

2m

1m

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter propagation

characteristics

1.0

Ta=25°C

0.9 10mA

0.8 9mA

8mA

0.7 7mA

6mA

5mA

4mA

0.6

3mA

0.5

0.4

2mA

0.3

0.2

IB=1mA

0.1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output

characteristics

1000

Ta=25°C

500

VCE=5V

2V

1V

200

100

50

20

1m 2m 5m 10m 20m 50m 100m 200m 500m 1

COLLECTOR CURRENT : lC (A)

Fig.4 DC current gain vs.

collector current ( )

1000

Ta=125°C

VCE=2V

500

25°C

−40°C

200

100

50

20

1m 2m 5m 10m 20m 50m 100m 200m 500m 1

COLLECTOR CURRENT : lC (A)

Fig.5 DC collector gain vs.

collector current ( )

1

Ta=25°C

500m

200m

100m

lC/lB=50

50m

20

10

20m

10m

5m

2m

1m

1m 2m 5m 10m 20m 50m 100m 200m 500m 1

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter saturation voltage

vs. collector current ( )

1

lC/lB=20

500m

200m

100m

Ta=125°C

25°C

50m

−40°C

20m

10m

5m

2m

1m

1m 2m 5m 10m 20m 50m 100m 200m 500m 1

COLLECTOR CURRENT : IC (A)

Fig.7 Collector-emitter saturation voltage

vs. collector current ( )

1000

Ta=25°C

f=100MHz

500

VCE=2V

200

100

50

20

10

10m 20m

50m 100m 200m 500m 1

EMITTER CURRENT : lE (A)

Fig.8 Transition frequency vs.

emitter current

1000

Ta=25°C

500

f=1MHz

lE=0A

200

100

50

20

10

5

2

1

0.1 0.2 0.5 1 2

5 10 20 50 100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.9 Collector output capacitance vs.

collector-base voltage

Rev.A

2/2

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