SS52C 查看數據表（PDF） - Diode Semiconductor Korea
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SS52C Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SS52C - - - SS510C
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 100 V
CURRENT: 5.0 A
FEATURES
◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
◇ For surface mounted applications
◇ Low profile package
◇ Built-in strain relief
◇ Metal silicon junction, majority carrier conduction
◇ High surge capability
◇ High current capability,low forward voltage drop
◇ Low power loss,high effciency
◇ For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
◇ High temperature soldering guaranteed:250oC/10 1
11 seconds at terminals
MECHANICAL DATA
◇ Case:JEDEC SMC,molded plastic over
1111passivated chip
◇ Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.007 ounces, 0.21 gram
SMC
6.9± 0.25
7.8± 0. 2
1. 3± 0. 25
0.25± 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
SS52C SS53C SS54C SS55C SS56C SS58C SS59C SS510C UNITS
Maximum recurrent peak reverse voltage
VRRM
20
30
40
Maximum RMS voltage
VRWS
14
21
28
Maximum DC blocking voltage
V DC
20
30
40
Maximum average forw ord rectified current at
c TL(SEE FIG.1) (NOTE 2)
I(AV)
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC IFSM
c Method)
Maximum instantaneous forw ard voltage at
v 5.0A(NOTE.1)
VF
0.55
Maximum DC reverse current @TA=25oC
IR
at rated DC blockjing voltage(NOTE1) @TA=100oC
20
Typical thermal resitance (NOTE2)
RθJA
RθJL
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
50
60
80
90 100
V
35
42
56
63 70
V
50
60
80
90 100
V
5.0
A
175
A
0.70
0.5
55
17
-55--- +150
-55--- +150
0.85
V
mA
10
oC/W
oC
oC
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