UPA102G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA102G-E1 Datasheet PDF : 8 Pages
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µPA102
TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 °C)
COLLECTOR CURRENT vs.
PIN 1 TO PIN 3 VOLTAGE
10
100
8
80
6
60
4
40
2
IB = 20 µ A
0
0
1
2
3
4
5
Pin 1 to Pin 3 Voltage, V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
20
10
5
2
1
0.5
0.2
VCE = 3 V
0.1
0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Base to Emitter Voltage, VBE (V)
1000
500
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
20
10
0.5
VCE = 3 V
12
5 10 20 50
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
12
VCE = 5 V
10
8
3V
6
1V
4
12
5 10 20 50
Collector Current, IC (mA)
POWER GAIN vs. FREQUENCY
18
ICC = 20 mA
14
ICC = 10 mA
10
ICC = 5 mA
6
2
.01 .02
.05 .1 .2
.5 1.0 2.0
Frequency, f (GHz)
GAIN AND NOISE FIGURE OF
INDIVIDUAL TRANSISTOR
20
VCC = 3 V
f = 1 GHz
8
GAIN
6
10
4
NF
2
0
12
5 10 20
0
50 100
Collector Current, IC (mA)
4
Data Sheet P10707EJ2V0DS00
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