BAP63-03 查看數據表（PDF） - NXP Semiconductors.

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BAP63-03

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

Silicon PIN diode

Product specification

BAP63-03

ELECTRICAL CHARACTERISTICS

Tj = 25 C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

TYP.

VF

forward voltage

IR

reverse leakage current

Cd

diode capacitance

rD

diode forward resistance

s212

isolation

s212

insertion loss

s212

insertion loss

s212

insertion loss

s212

insertion loss

L

charge carrier life time

LS

series inductance

IF = 50 mA

VR = 35 V

VR = 0; f = 1 MHz

VR = 1 V; f = 1 MHz

VR = 20 V; f = 1 MHz

IF = 0.5 mA; f = 100 MHz; note 1

IF = 1 mA; f = 100 MHz; note 1

IF = 10 mA; f = 100 MHz; note 1

IF = 100 mA; f = 100 MHz; note 1

VR = 0; f = 900 MHz

VR = 0; f = 1800 MHz

VR = 0; f = 2450 MHz

IF = 0.5 mA; f = 900 MHz

IF = 0.5 mA; f = 1800 MHz

IF = 0.5 mA; f = 2450 MHz

IF = 1 mA; f = 900 MHz

IF = 1 mA; f = 1800 MHz

IF = 1 mA; f = 2450 MHz

IF = 10 mA; f = 900 MHz

IF = 10 mA; f = 1800 MHz

IF = 10 mA; f = 2450 MHz

IF = 100 mA; f = 900 MHz

IF = 100 mA; f = 1800 MHz

IF = 100 mA; f = 2450 MHz

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 ;

measured at IR = 3 mA

0.95



0.4

0.35

0.27

2.5

1.95

1.17

0.9

15.4

10.1

7.8

0.21

0.28

0.38

0.18

0.26

0.35

0.13

0.20

0.30

0.10

0.18

0.28

310

1.5

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

MAX.

1.1

10





0.32

3.5

3

1.8

1.5

































UNIT

V

nA

pF

pF

pF









dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

ns



nH

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-s)

thermal resistance from junction to soldering point

VALUE

120

UNIT

K/W

2004 Feb 11

3

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