SGH23N60UF 查看數據表（PDF） - Fairchild Semiconductor
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SGH23N60UF Datasheet PDF : 7 Pages
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SGH23N60UF
10
N-CHANNEL IGBT
1
0.5
0.2
0.1
0.1
0.05
Pdm
t1
0.02
t2
0.01
single pulse
0.01
0.00001
0.0001
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
1200
1000
800
Cies
600
400
200
0
1
Coes
Cres
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
18
Vcc = 300V
Ic = 12A
16
14
12
10
8
6
4
2
0
0
10
20
30
40
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
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