2N6534 查看數據表（PDF） - New Jersey Semiconductor
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2N6534 Datasheet PDF : 2 Pages
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J
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6534
DESCRIPTION
• High DC Current Gain-
:hFE= 1000(Min.)@lc=5A
• Collector-Emitter Sustaining Voltage-
:VCEo(susr 80V(Min.)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ lc= 5A
APPLICATIONS
• Power switching
• Hammer drivers
• Series and shunt regulators
• Audio amplifiers
/
1 rt
R1
T3
PIN 1. BASE
J.
L
2. EMITTER
•VvV 1—
m 12
3. COLLECT OR (CASE)
TO-66 package
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCER
Collector-Emitter Voltage RBE= 100Q
80
V
VCEV
Collector-Emitter Voltage VBE= -1 -5V
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current
8
A
ICM
Collector Current-peak
15
A
IB
Base Current
Collector Power Dissipation
PC
@Tc=25r
TI
Junction Temperature
Tstg
Storage Temperature Range
250
mA
36
W
150
'C
-65-+150 -c
,
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DiM MIN MAX
A 31.40 31,30
B 1730 17.70
C 6.70 7.10
D 0.70 0.90
£ 1.40 1.60
_Jj™
5.08
H
2.54
K 9m 10.20
L 14.70 14.90
N 12.40 12.60
P 3.60 3.30
li 24.30 24.50
V 3.50 3.70
NJ Somi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I louever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in Its use."
NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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