2N6045 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
零件编号
产品描述 (功能)
生产厂家
2N6045 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
2N6045
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A, IB= 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 8A, IB= 80mA
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A, IB= 80mA
4.5
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
2.8
V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
0.5
mA
ICEO
Collector Cutoff Current
VCE= 50V, IB= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 4V
1000
20000
hFE-2
DC Current Gain
IC= 8A; VCE= 4V
100
COB
Output Capacitance
IE= 0; VCB= 10V,f= 0.1MHz
300
pF
SPTECH website：www.superic-tech.com
2
Share Link: 