2N5598 查看數據表（PDF） - New Jersey Semiconductor
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2N5598 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N5598
DESCRIPTION
• DC Current Gain-
: hFE= 70-200@lc= 1A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V(Min)
• Complement to Type 2N5597
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
3
-<
PIN 1 BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-66 package
ABSOLUTE MAXIMUM RAT[NGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
2
A
PC
Collector Power Dissipation@Tc=25'C
20
W
Tj
Junction Temperature
150
°c
Tstg
Storage Temperature
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.37 "C/W
M
j_
17
rr
I
i
~~!C
_^4U— D i PL '-K
U —"
/ r\ (h ^>NS
{^j
G
B
p£v T
t
•'_^•r^^ g
IIHIt
DIM Mln MAX
A 31.40 31.80
B 17J» 17.70
C 6.70 7.10
D 0.70 0.90
E 1.40 1.60
13,
5,03
H
2,54
K 9.80 10.20
L 14.70 14.90
N 12.40 12.60
9 3.60 3.80
U 24.30 24.50
V 3.50 3/70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Concluctors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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