SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- TIP562
= 400V(Min)- TIP563
·High Power Dissipation
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators, and a variety of power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
TIP562
300
VCBO Collector-Base Voltage
V
TIP563
400
TIP562
300
VCEO Collector-Emitter Voltage
V
TIP563
400
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100℃
TJ
Junction Temperature
2
A
100
W
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
TIP562/563
SPTECH website:www.superic-tech.com
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