FS16UMA-5A 查看數據表（PDF） - Renesas Electronics
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FS16UMA-5A Datasheet PDF : 7 Pages
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MITSUBISHI Nch POWER MOSFET
FS16UMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
IS = 8A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ.
Max.
250
—
—
V
—
—
±0.1 µA
—
—
1
mA
2.0
3.0
4.0
V
—
0.19
0.25
Ω
—
1.52
2.00
V
—
16.0
—
S
—
1850
—
pF
—
180
—
pF
—
50
—
pF
—
30
—
ns
—
50
—
ns
—
320
—
ns
—
70
—
ns
—
1.5
2.0
V
—
—
1.14 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 20V,10V,8V,6V
40
TC = 25°C
Pulse Test
30
20
5V
10
PD = 110W
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
7
5
3
tw =
2
10µs
101
7
100µs
5
3
2
1ms
100
7
5 TC = 25°C
3 Single Pulse
2
10ms
DC
10–1
7
2 3 5 7101 2 3 5 7102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS =
20V,10V,8V,6V
TC = 25°C
Pulse Test
16
5V
12
8
4
4V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
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