PMD10K100 查看數據表（PDF） - New Jersey Semiconductor
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PMD10K100 Datasheet PDF : 2 Pages
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Silicon NPN Darlingtion Power Transistor
PMD10K100
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
100
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 6A; IB= 24mA
VsE(sat) Base-Emitter Saturation Voltage
lc= 6A; IB= 24mA
VBEJOR) Base-Emitter On Voltage
ICER
Collector Cutoff current
IEBO
Emitter Cut-off current
lc= 6A; VC6= 3V
VCE=100V;RBe=1KQ
VCE= 1 00V; RBe= 1 K Q , Tc=1 50"C
VEB= 5V; lc= 0
2.0
V
2.8
V
2.8
V
1.0
5.0
mA
2.0
mA
hFE
DC Current Gain
lc= 6A; VOE= 3V
1000 20000
fr
Current-Gain—Bandwidth Product lc= 5A; VCE= 3V, f= 1kHz
4
MHz
COB
Output Capacitance
lE=0;VCB=10V;ftest= 1.0MHz
300
PF
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