Philips Semiconductors
Magnetic field sensor
Product specification
KMZ51
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Rflip
Iflip (min)
tflip (min)
flip coil resistance
minimum recommended flipping current; note 2
minimum flip pulse duration; note 2
1
2
3
Ω
800
1 000
1 200
mA
1
3
100
µs
Notes
1. The compensation coil generates a field Hcomp = Acomp × Icomp in addition to the external field Hext. Sensor output will
become zero if Hext = −Hcomp.
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
CIRCUIT DIAGRAM
handbook, ha−lIfFpage
+VO
−VO
−IC
8
7
6
5
Z1
Z1
1
2
3
4 MGD793
+IF
VCC
GND
+IC
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCC
Ptot
Tstg
Tbridge
Icomp
Iflip (max)
Pflip (max)
Visol
PARAMETER
bridge supply voltage
total power dissipation
storage temperature
bridge operating temperature
maximum compensation current
maximum flipping current
maximum flipping power dissipation
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatstone bridge;
flip coil and compensation coil
MIN.
−
−
−65
−40
−
−
−
−
MAX.
9
130
+150
+125
15
1 500
50
60
UNIT
V
mW
°C
°C
mA
mA
mW
V
2000 Jun 13
3