MMBT2907AT 查看數據表（PDF） - Galaxy Semi-Conductor

零件编号

产品描述 (功能)

生产厂家

MMBT2907AT

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Galaxy Semi-Conductor 

Production specification

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2907AT

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V(BR)CBO

V(BR)CEO

V(BR)BEO

ICBO

ICEX

IBL

hFE

VCE（sat）

VBE（sat）

Cobo

Cibo

fT

td

tr

ts

tf

Collector-base breakown voltage IC=-10μA,IE=0

-60

Collector- emitter breakown voltage IC=-10mA,IB=0

-60

Emitter-base breakown voltage

IE=-10μA,IC=0

-5

Collector cut-off current

IE=0,VCB=-50V

IE=0,VCB=-50V,TA=125℃

Collector cut-off current

VCE=-30V,VEB(OFF)=-0.5V

Base cut-off current

VCE=-30V, VEB(OFF)=-0.5V

DC current gain

VCE=-10V,IC=-100uA

75

VCE=-10V,IC=-1mA

100

VCE=-10V,IC=-10mA

100

VCE=-10V,IC=-150mA

100

VCE=-10V,IC=-500mA

50

collector-emitter saturation voltage

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

base-emitter saturation voltage

Output capacitance

Input capacitance

IC=-150mA; IB=-15mA

IC=-500mA; IB=-50mA

IE=0,VCB=-10V,f=1MHz

IC=0,VBE=-2V,f =1MHz

transition frequency

delay time

rise time

IC=-50mA,VCE =-20V,f=100MHz 200

-

IC=-150mA,IB1=-15mA,VCC=-30V

-

storage time

fall time

VCC=-6.0V, IC=-150mA

-

IB1=IB2=-15mA

-

-10 nA

-10 uA

-50 nA

-50 nA

300

-0.4 V

-1.6 V

-1.3 V

-2.6 V

8.0 pF

30 pF

MHz

10 ns

40 ns

80 ns

30 ns

H032

Rev.A

www.gmicroelec.com

2

Share Link: