BT136-600 查看數據表（PDF） - New Jersey Semiconductor
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BT136-600 Datasheet PDF : 2 Pages
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Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
p
^th j-mb
Rth j-a
PARAMETER
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
in free air
MIN.
-
TYP.
60
MAX.
3.0
3.7
UNIT
K/W
K/W
KM
STATIC CHARACTERISTICS
T, = 25 °C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT136-
...F ...G
IOT
Gate trigger current
VD= 12V; IT = 0.1 A
T2+G+
-
5
35
25
50 mA
T2+G-
-
8
35
25
50 mA
T2-G-
-
11
35
25
50 mA
T2-G+
.
30
70
70 100 mA
IL
Latching current
V D = 1 2 V ; IGT = 0.1 A
T2+G+
-
7
20
20
30 mA
T2+G-
.
16
30
30
45 mA
T2-G-
.
5
20
20
30 mA
T2-G+
-
7
30
30
45 mA
IH
Holding current
V D = 1 2 V ; IGT = 0.1 A
-
5
15
15
30 mA
VT
On-state voltage
IT = 5 A
.
1.4
1.70
V
VGT
Gate trigger voltage
VD = 12V; IT = 0.1 A
-
0.7
1.5
V
VD = 400V; IT = 0.1 A; 0.25 0.4
-
V
T,= 125°C
ID
Off-state leakage current
-
0.1
0.5
mA
T^rr'
DYNAMIC CHARACTERISTICS
Ti - 25 °C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
BT136-
...F
dVD/dt
Critical rate of rise of
off-state voltage
"DM = " ' "> VDRM(max)!
100 50
Tj = 125 °C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; T; = 95 'C;
-
-
commutating voltage
'IT(RMS) - H 4"A'-
dlcom/dt= 1.8 A/ms; gate
open circuit
tgt
Gate controlled turn-on 'TM = 6 A; VD = VDRM/max>;
-
-
time
IG = 0.1 A;dlG/dt = 5A/ns
TYP. MAX. UNIT
...G
200 250
- V/^is
10
50
- V/^s
-
2
-
^
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