MSB710-RT2 查看數據表（PDF） - ON Semiconductor

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MSB710-RT2

PNP General Purpose Amplifier Transistors Surface Mount

ON Semiconductor 

MSB710-RT1

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = –10 µAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = –10 µAdc, IC = 0)

Collector–Base Cutoff Current

(VCB = –20 Vdc, IE = 0)

DC Current Gain(1)

(VCE = –10 Vdc, IC = –150 mAdc)

(VCE = –10 Vdc, IC = 500 mAdc)

Collector–Emitter Saturation Voltage

(IC = – 300 mAdc, IB = – 30 mAdc)

Collector–Base Saturation Voltage

(IC = – 300 mAdc, IB = – 30 mAdc)

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

hFE1

hFE2

VCE(sat)

VBE(sat)

Cob

Min

– 50

– 60

– 7.0

—

120

40

—

—

—

Max

—

—

—

– 0.1

240

—

– 0.6

–1.5

15

Unit

Vdc

Vdc

Vdc

µAdc

—

Vdc

Vdc

pF

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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