CR6PM-12G 查看數據表（PDF） - Renesas Electronics
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CR6PM-12G Datasheet PDF : 8 Pages
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CR6PM-12G
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Symbol
IT(RMS)
IT(AV)
Ratings
9.4
6
ITSM
90
I2t
34
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.0
2000
Preliminary
Unit
Conditions
A
A
Commercial frequency, sine half wave
180 conduction, Tc = 110C
A
60 Hz sine half wave, 1full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1cycle of half
wave 60 Hz, surge on-state current
W
W
V
V
A
C
C
g
Typical value
V
Ta = 25C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Symbol
IRRM
IDRM
VTM
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
2.0
5.0
2.0
5.0
1.7
Unit
mA
mA
mA
mA
V
Gate trigger voltage
VGT
—
—
1.0
V
Gate non-trigger voltage
VGD
0.2
—
—
V
0.1
—
—
V
Gate trigger current
IGT
—
—
10
mA
Holding current
IH
—
15
—
mA
Thermal resistance
Rth(j-c)
—
—
4.0 C/W
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions
Tj = 125C, VRRM applied
Tj = 150C, VRRM applied
Tj = 125C, VDRM applied
Tj = 150C, VDRM applied
Tj = 25C, ITM = 20 A
instantaneous value
Tj = 25C, VD = 6 V, IT = 1 A
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Tj = 25C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to case Note1
R07DS0670EJ0100 Rev.1.00
Jul 23, 2012
Page 2 of 7
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