IRFF330 查看數據表（PDF） - New Jersey Semiconductor

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IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

New Jersey Semiconductor 

IRFF330

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current (Note 3)

SYMBOL

TEST CONDITIONS

ISD

Modified MOSFET

D<

Symbol Showing the

'SDM

Integral Reverse P-N

Junction Rectifier.

MIN TYP

-

-

MAX

3.5

14

UNITS

A

A

.^S i ^i )

Source to Drain Diode Voltage (Note 2)

VSD

Tj = 25°C, ISD = 3.5A, VGS = 0V (Figure 13)

-

-

1.6

V

Reverse Recovery Time

|rr

Tj = 150°C, ISD = 3.5A, dlso/dt = 100A/|is

-

600

-

ns

Reverse Recovered Charge

QRR Tj = 150°C, ISD = 3.5A, dlso/dt = 100A/|o.s

-

4.0

-

uC

NOTES:

2. Pulse test: pulse width < 300ns, duty cycle < 2%.

3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, start Tj = 25°C, L = 42.85mH, RG = 25il, peak IAS = 3.5A (Figures 14,15).

Typical Performance Curves umess otherwise specified

tt

UJ in

X,^

\^

cc

02

\J o:

Q

50

100

150

Tc, CASE TEMPERATURE (°C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

25

50

75

100

125

150

Tc, CASE TEMPERATURE (°C)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

NOTES:

DUTY FACTOR: D = t-i/t2

TJ = PDM * Z6jc(«)

RECTANGULAR PULSE DURATION (LC)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

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