JANSR2N7269U 查看數據表（PDF） - International Rectifier

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产品描述 (功能)

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JANSR2N7269U

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1)

International Rectifier 

IRHN7250, JANSR2N7269U

Pre-Irradiation

Footnotes:

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 50V, starting TJ = 25°C, L=1.48mH

Peak IL = 26A, VGS =12V

 ISD ≤ 26A, di/dt ≤ 190A/µs,

VDD ≤ 200V, TJ ≤ 150°C

à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

160 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 09/2014

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www.irf.com

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