UPA1874B 查看數據表（PDF） - NEC => Renesas Technology

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UPA1874B

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1874B

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30.0 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±12.0 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10.0 V, ID = 1.0 mA

VDS = 10.0 V, ID = 4.0 A

VGS = 4.5 V, ID = 4.0 A

RDS(on)2 VGS = 4.0 V, ID = 4.0 A

RDS(on)3 VGS = 3.1 V, ID = 4.0 A

RDS(on)4 VGS = 2.5 V, ID = 4.0 A

Input Capacitance

Ciss

VDS = 10.0 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss f = 1.0 MHz

Turn-on Delay Time

td(on)

VDD = 10.0 V, ID = 4.0 A

Rise Time

tr

VGS = 4.0 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 24.0 V

Gate to Source Charge

QGS

VGS = 4.0 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 8.0 A

IF = 8.0 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 8.0 A, VGS = 0 V

Qrr

di/dt = 50 A/µs

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

TEST CIRCUIT 1 SWITCHING TIME

MIN.

0.50

5

9.0

9.5

10.0

11.0

TYP.

1.00

11.5

12.0

13.0

15.0

930

170

120

46

230

260

250

10.0

2.0

4.5

0.82

150

80

MAX.

1.0

±10.0

1.50

14.0

14.5

16.5

19.5

UNIT

µA

µA

V

S

mΩ

mΩ

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

Wave Form

0

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G16743EJ1V0DS

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