NSVBAV70DXV6 查看數據表（PDF） - ON Semiconductor

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NSVBAV70DXV6

Monolithic Dual Switching Diode Common Cathode

ON Semiconductor 

BAV70DXV6, NSVBAV70DXV6

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (Note 2)

(I(BR) = 100 mAdc)

V(BR)

100

−

Vdc

Reverse Voltage Leakage Current (Note 2)

(VR = 25 Vdc, TJ = 150°C)

(VR = 100 Vdc)

(VR = 70 Vdc, TJ = 150°C)

IR

mAdc

−

60

−

1.0

−

100

Diode Capacitance (Note 2)

(VR = 0, f = 1.0 MHz)

CD

−

1.5

pF

Forward Voltage (Note 2)

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

mVdc

−

715

−

855

−

1000

−

1250

Reverse Recovery Time (Note 2)

(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)

RL = 100 W

trr

−

6.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. For each individual diode while second diode is unbiased.

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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