155N3LH6 查看數據表（PDF） - STMicroelectronics

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155N3LH6

N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET

STMicroelectronics 

STB155N3LH6

STD155N3LH6

N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK

STripFET™VI DeepGATE™ Power MOSFET

Features

Order codes

STB155N3LH6

STD155N3LH6

VDSS

30 V

RDS(on)

max

3.0 mΩ

1. Current limited by package

■ 100% avalanche tested

■ Logic level drive

ID(1) PTOT

80 A 110 W

Applications

■ Switching applications

■ Automotive

Description

These devices are N-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

TAB

3

1

D²PAK

TAB

3

1

DPAK

Figure 1. Internal schematic diagram

$4!"OR

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Table 1. Device summary

Order codes

STB155N3LH6

STD155N3LH6

Marking

155N3LH6

3

!-V

Package

D2PAK

DPAK

Packaging

Tape and reel

September 2011

Doc ID 17893 Rev 3

1/18

www.st.com

18

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