2N5868 查看數據表（PDF） - New Jersey Semiconductor
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2N5868 Datasheet PDF : 2 Pages
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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5868
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(satr -1.0V(Max.)@ lc= -5A
• DC Current Gain-
: hFE=20-100@lc=-1.5A
APPLICATIONS
• Designed for medium-speed switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation@Tc=25"C 87.5
W
Tj
Junction Temperature
200
r
Tstg
Storage Temperature
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 •c/w
3
1
Y
TV
'
2
PIN 1.BASE
2- HVHTTER
3. COLLECT OR (CASE)
TO-3 package
\
t
I
I
1 ::
-~!U-D, PL
f~ OH
"\ t ' X t i t t S v / \) C
%V7dl^J ^x^'
,B
\1 I
H3H
DIM MM MAX
A
39 M)
B 25.30 26.67
C
7.90 8.30
D
0.30 1,10
E
1.40
1.60
G
10.92
H
54S
K 11-40 13.50
L 16.75 17.05
N 19.40 19.62
_Q
4(B 4.20
U 30.00 3020
W
jj 3fQ
4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of gsooiilng
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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