MC74VHC1GT132P5T5G 查看數據表（PDF） - ON Semiconductor

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MC74VHC1GT132P5T5G

2-Input NAND Schmitt-Trigger

ON Semiconductor 

MC74VHC1G132, MC74VHC1GT132

DC ELECTRICAL CHARACTERISTICS (MC74VHC1GT132)

Symbol

Parameter

Test

Conditions

VCC

TA = 25°C

(V) Min Typ Max

VT+ Positive Threshold

Voltage

3.0 − 1.88 2.25

4.5 − 2.66 3.10

5.5 − 3.21 3.70

VT− Negative Threshold

Voltage

3.0 0.65 1.03 −

4.5 1.10 1.62 −

5.5 1.45 2.02 −

VH

Hysteresis Voltage

3.0 0.30 0.85 1.60

4.5 0.40 1.05 2.00

5.5 0.50 1.20 2.25

VOH High−Level Output VIN = VIH or VIL

Voltage

IOH = −50 mA

2.0 1.9 2.0 −

IOH = −50 mA

3.0 2.9 3.0 −

IOH = −50 mA

4.5 4.4 4.5 −

IOH = −4 mA

3.0 2.58 −

−

IOH = −8 mA

4.5 3.94 −

−

VOL Low−Level Output VIN = VIH or VIL

Voltage

IOL = 50 mA

2.0

IOL = 50 mA

3.0

IOL = 50 mA

4.5

IOL = 4 mA

3.0

IOL = 8 mA

4.5

− 0.0 0.1

− 0.0 0.1

− 0.0 0.1

−

− 0.36

−

− 0.36

IIN

Input Leakage Cur- VIN = 5.5 V or

1.65 −

rent

GND

to 5.5

− ±0.1*

IOFF Power Off Leakage VIN = 5.5 V or

Current

VOUT = 5.5 V

ICC

Quiescent Supply

VIN = VCC or

Current

GND

0

−

5.5 −

− 1.0

− 1.0

ICCT Increase in Quies- One Input: VIN

5.5

−

cent Supply Current = 3.4 V; Other

per Input Pin

Input at VCC or

GND

*Guaranteed by design.

− 1.35

−40°C ≤ TA ≤ 85°C

Min

Max

−

2.25

−

3.10

−

3.70

0.65

−

1.10

−

1.45

−

0.30

1.60

0.40

2.00

0.50

2.25

1.9

−

2.9

−

4.4

−

2.48

−

3.80

−

−

0.1

−

0.1

−

0.1

−

0.44

−

0.44

−

±1.0

−

10

−

20

−

1.5

−55°C ≤ TA ≤ 125°C

Min

Max Unit

−

2.25

V

−

3.10

−

3.70

0.65

−

V

1.10

−

1.45

−

0.30

1.60

V

0.40

2.00

0.50

2.25

V

1.9

−

2.9

−

4.4

−

2.34

−

3.66

−

V

−

0.1

−

0.1

−

0.1

−

0.52

−

0.52

−

$1.0 mA

−

10

mA

−

40

mA

−

1.65 mA

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)

TA = 25°C

Symbol

Parameter

Conditions VCC (V) Min Typ Max

tPLH, Propagation Delay, CL = 15 pF 3.0 to 3.6 − 4.6 11.9

tPHL A to Y

(Figures 3 and 4)

CL = 50 pF

− 6.1 15.4

CL = 15 pF 4.5 to 5.5 − 3.6 7.7

CL = 50 pF

− 4.3 9.7

CIN Input Capacitance

− 4.0 10

COUT

Output Capacitance

Output in

High

Impedance

State

− 6.0 −

−40°C ≤ TA ≤ 85°C

Min

Max

−

14.0

−

17.5

−

9.0

−

11.0

−

10

−

−

−55°C ≤ TA ≤ 125°C

Min

Max Unit

−

16.1

ns

−

19.6

−

10.3

−

12.3

−

10

pF

−

−

pF

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Note 5)

8.0

pF

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic

power consumption; PD = CPD  VCC2  fin + ICC  VCC.

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