2SA1261-Z 查看數據表（PDF） - Inchange Semiconductor
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2SA1261-Z Datasheet PDF : 2 Pages
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1261-Z
DESCRIPTION
·High switching speed
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC= -5A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC3157
APPLICATIONS
·High speed high voltage switching industrial use
·DC/DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-3.5
A
PC
Total Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range -55~150 ℃
isc website：www.iscsemi.com
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