2SC3850 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3850 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3850
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 2A ; VCE= 5V
15
hFE-2
DC Current Gain
IC= 10A ; VCE= 5V
10
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V; f= 1MHz
15
MHz
Switching Times
ton
Turn-on Time
1.0 μs
tstg
Storage Time
IC= 10A, IB1= -IB2= 2A; VCC= 125V
2.5 μs
tf
Fall Time
1.0 μs
SPTECH website：www.superic-tech.com
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