2N6546 查看數據表（PDF） - Central Semiconductor
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2N6546 Datasheet PDF : 2 Pages
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2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6546, 2N6547
types are NPN Silicon Power Transistors designed for
high voltage, high current, applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Emitter Current
IE
Peak Emitter Current
IEM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation
PD
Power Dissipation, TC=100°C
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
2N6546
2N6547
650
850
350
450
300
400
9.0
15
30
25
50
10
20
175
100
-65 to +200
1.0
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6546
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
- 1.0
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
- 4.0
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
- 5.0
IEBO
VEB=9.0V
- 1.0
BVCEX
VCL=Rated VCEX, IC=8.0A, TC=100°C
350 -
BVCEX
VCL=Rated VCEO-100V, IC=15A, TC=100°C
200 -
BVCEO IC=100mA
300 -
VCE(SAT) IC=10A, IB=2.0A
- 1.5
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
- 2.5
VCE(SAT) IC=15A, IB=3.0A
- 5.0
VBE(SAT) IC=10A, IB=2.0A
- 1.6
VBE(SAT) IC=10A, IB=2.0A, TC=100°C
- 1.6
hFE
VCE=2.0V, IC=5.0A
12 60
hFE
VCE=2.0V, IC=10A
6.0 30
2N6547
MIN MAX
- 1.0
- 4.0
- 5.0
- 1.0
450 -
300 -
400 -
- 1.5
- 2.5
- 5.0
- 1.6
- 1.6
12 60
6.0 30
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R2 (12-December 2011)
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