20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA968
DESCRIPTION
• Collector-Emitter Breakdown Voltage
:V(BR)cEo=-160V(Min)
• Good Linearity of hFE
• Complement to Type 2SC2238
PIN 1.BASE
2.COLLECTOR
3-EMITTER
TO-220C package
APPLICATIONS
• Power amplifier applications
• Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-1.5
A
IE
Emitter Current- Continuous
Total Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
1.5
A
25
W
150
°c
Tstg
Storage Temperature Range
-55-150
"C
-«
E
!
1
.
rf . , » •* \<f H |
liQ
Uk
f
A
* *S
T I.
T * HT, I l l
K
T
'1*°
H c> H
Jt
c
i
»r J
» Rr
mm
DIM MIN MAX
A 15,50 15.90
B 9.90 10.20
C 4.20 4,50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
H 2,68 2.90
^ 0.44 0.60
K 13,00 13.40
L 1,20 I.4S
0 2.70 2.90
R 2.30 2.70
S 1.29 1.35
L 6.45 6.65
V 8.66 8.86
NJ Semi-ComUictors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of ggooiini g
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Coruluctors encourages customers to verify that datasheetsare current before placing orders.
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