2SB1647 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB1647

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2SB1647

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V(Min)

·High DC Current Gain-

: hFE= 5000( Min.) @(IC= -10A, VCE= -4V)

·Low Collector Saturation Voltage-

: VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA)

·Complement to Type 2SD2560

APPLICATIONS

·Designed for audio, series regulator and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

-1

A

130

W

150

℃

Tstg

Storage Temperature

-55~150 ℃

SPTECH website：www.superic-tech.com

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