2N7002KA 查看數據表（PDF） - NXP Semiconductors.

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2N7002KA

N-channel TrenchMOS FET

NXP Semiconductors. 

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

3. Ordering information

Table 2. Ordering information

Type number

Package

Name

Description

2N7002KA

TO-236AB plastic surface-mounted package; 3 leads

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

VDGR

drain-source voltage

drain-gate voltage (DC)

25 °C ≤ Tj ≤ 150 °C

25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ

VGS

VGSM

ID

gate-source voltage

peak gate-source voltage

drain current

IDM

peak drain current

Ptot

total power dissipation

Tstg

storage temperature

tp ≤ 50 µs; pulsed; duty cycle = 25 %

Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3

Tsp = 100 °C; VGS = 10 V; see Figure 2

Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3

Tsp = 25 °C; see Figure 1

Tj

junction temperature

Source-drain diode

IS

source current

ISM

peak source current

Tsp = 25 °C

Tsp = 25 °C; pulsed; tp ≤ 10 µs

Version

SOT23

Min

Max Unit

-

60

V

-

60

V

-

±15

V

-

±40

V

-

320

mA

-

200

mA

-

1.28 A

-

0.83 W

−55

+150 °C

−55

+150 °C

-

300

mA

-

1.2

A

2N7002KA_3

Product data sheet

Rev. 03 — 25 February 2008

© NXP B.V. 2008. All rights reserved.

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