2N7002KA 查看數據表（PDF） - NXP Semiconductors.
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2N7002KA Datasheet PDF : 11 Pages
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NXP Semiconductors
120
Pder
(%)
80
003aab946
120
Ider
( %)
80
2N7002KA
N-channel TrenchMOS FET
003aac033
40
40
0
0
50
100
150
200
Tsp (°C)
0
0
50
100
150
200
Tsp (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Fig 2. Normalized continuous drain current as a
function of solder point temperature
10
ID
(A)
1
Limit RDSon = VDS / ID
003aab788
tp = 10 µ s
100 µs
1 ms
10-1
10 ms
DC
100 ms
10-2
1
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
2N7002KA_3
Product data sheet
Rev. 03 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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