TIP2955 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP2955

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

TIP2955

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0

-60

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A

-1.0

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ;IB= -3.3A

-3.0

V

VBE(on) Base-Emitter On Voltage

IC= -4A ; VCE= -4V

-1.8

V

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

-0.7

mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-1.0

mA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-5.0

mA

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

20

70

hFE-2

DC Current Gain

IC= -10A ; VCE= -4V

5

Is/b

Second Breakdown Collector Current

with Base Forward Biased

VCE= -30V,t= 1.0s,Nonrepetitive

3.0

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -10V;ftest= 1.0MHz

2.5

A

MHz

SPTECH website：www.superic-tech.com

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