MMBT6517 查看數據表（PDF） - TY Semiconductor
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MMBT6517 Datasheet PDF : 2 Pages
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SMD Type
Transistors
Product specification
MMBT6517
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-emitter breakdown voltage *
V(BR)CEO IC = 1.0 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO IC = 100 ìA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO IE = 10 ìA, IC = 0
Collector cutoff current
ICBO VCB = 250 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
DC current gain *
hFE IC = 30 mA, VCE = 10 V
IC = 50 mA, VCE = 10 V
IC = 100 mA, VCE = 10 V
IC = 10 mA, IB = 1.0 mA
Collector-emitter saturation voltage *
IC = 20 mA, IB = 2.0 mA
VCE(sat)
IC = 30 mA, IB = 3.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = 20 mA, IB = 2.0 mA
IC = 30 mA, IB = 3.0 mA
Base-emitter on voltage
VBE(on) IC = 100 mA, VCE = 10 V
Current-gain - bandwidth product
fT IC = 10 mA, VCE = 20 V, f = 20 MHz
Collector-base capacitance
Ccb VCB = 20 V, IE = 0, f = 1.0 MHz
Emitter-base capacitance
Ceb VCB = 0.5 V, IE = 0, f = 1.0 MHz
* Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%.
Marking
Marking
1Z
Min Typ Max Unit
350
V
350
V
6
V
50 nA
50 nA
20
30
30
200
20
200
15
0.30 V
0.35 V
0.50 V
1.0 V
0.75 V
0.85 V
0.90 V
2
V
40
200 MHz
6 pF
80 pF
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4008-318-123
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