C3691 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

零件编号

产品描述 (功能)

生产厂家

C3691

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC= 4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V (Min)

APPLICATIONS

·Designed for high speed and power switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

2.5

A

25

W

2

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

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