CR02AM-8-A6-BD0 查看數據表（PDF） - Renesas Electronics

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CR02AM-8-A6-BD0

400V - 0.2A - Thyristor Low Power Use

Renesas Electronics 

CR02AM-8

Data Sheet

Electrical Characteristics

Parameter

Symbol Min.

Repetitive peak reverse current

IRRM

—

Typ.

—

Max.

0.1

Unit

mA

Test conditions

Tj = 125C, VRRM applied

Repetitive peak off-state current IDRM

—

—

0.1

mA Tj = 125C, VDRM applied

RGK=1 k

On-state voltage

VTM

—

—

1.6

V

Tc = 25C, ITM = 0.6 A,

instantaneous value

Gate trigger voltage

VGT

—

—

0.8

V

Tj = 25C, VD = 6 V,

IT = 0.1 A Note3

Gate non-trigger voltage

VGD

0.2

—

—

V

Tj = 125C, VD = 1/2 VDRM

RGK=1 k

Gate trigger current

IGT

1

—

100 Note2

A

Tj = 25C, VD = 6 V,

IT = 0.1 A Note3

Holding current

IH

—

—

3

mA Tj = 25C, VD = 12 V,

RGK=1 k

Thermal resistance

Rth (j-a)

—

—

180

C/W Junction to ambient

Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.

Item

A

B

C

D

E

IGT (A)

1 to 30

20 to 50 40 to 100

1 to 50

20 to 100

The above values do not include the current flowing through the 1 k resistance between the gate and

cathode.

3. IGT, VGT measurement circuit.

60W

A1

IGS IGT

TUT

A3 A2

3V

DC

RGK

1

V1

2

6V

DC

1kW

VGT

Switch

Switch 1 : IGT measurement

Switch 2 : VGT measurement

(Inner resistance of voltage meter is about 1kW)

R07DS1423EJ0300 Rev.3.00

Dec. 12, 2018

Page 2 of 8

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