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PSMN7R6-60BS Datasheet PDF : 14 Pages
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Nexperia
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
30
4.5
5.0
RDSon
(mΩ)
20
003aad667
5.5
10
6.0
VGS (V) = 15 10.0 8.0
0
0
20
40
60
80
100
ID (A)
10
VGS
(V)
8
6
VDS = 12 V
30 V
003aad671
48 V
4
2
0
0
10
20
30
40
50
QG (nC)
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate-source voltage as a function of gate
of drain current; typical values
charge; typical values
104
003aad668
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
C
(pF)
103
102
10−2
10−1
1
Ciss
Coss
Crss
10
102
VDS (V)
Fig 15. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN7R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© Nexperia B.V. 2017. All rights reserved
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