BFP520(2001) 查看數據表（PDF） - Infineon Technologies
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BFP520 Datasheet PDF : 8 Pages
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SIEGET45 BFP520
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 20 mA, VCE = 2 V
V(BR)CEO 2.5
ICBO
-
IEBO
-
hFE
70
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Collector-emitter capacitance
VCE = 2 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
fT
-
Ccb
-
Cce
-
Ceb
-
F
-
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable 1)
Gms
-
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Insertion power gain
|S21|2
-
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50
Third order intercept point at output
IP3
VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,
IC = 20 mA
-
IC = 7 mA
-
1dB compression point
P-1dB
VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,
IC = 20 mA
-
IC = 7 mA
-
3 3.5
- 200
-
35
110 200
45
-
0.06 -
0.3
-
0.35 -
0.95 -
23
-
21
-
25
-
17
-
12
-
5
-
Unit
V
nA
µA
-
GHz
pF
dB
dB
dBm
1Gms = |S21 / S12|
2
Sep-26-2001
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