BD46XXG 查看數據表（PDF） - ROHM Semiconductor
零件编号
产品描述 (功能)
生产厂家
BD46XXG Datasheet PDF : 10 Pages
| |||
BD45□□□G, BD46□□□G series
Technical Note
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Power Supply Voltage
VDD-GND
-0.3 ~ +10
V
Output Voltage
Nch Open Drain Output
CMOS Output
VOUT
GND-0.3 ~ +10
V
GND-0.3 ~ VDD+0.3
ER pin Voltage
Power Dissipation
VCT
*1 *2
Pd
GND-0.3 ~ VDD+0.3
V
540
mW
Operating Temperature
Topr
-40 ~ +105
°C
Ambient Storage Temperature
Tstg
*1 Use above Ta=25°C results in a 5.4mW loss per degree.
*2 When mounted on a 70mm×70mm×1.6mm glass epoxy board.
-55 ~ +125
°C
Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
Detection Voltage
VDET VDD=HL, RL=470kΩ
*1
Detection Voltage
Temperature coefficient
VDET/
∆T
-40°C~+105°C
Hysteresis Voltage
∆VDET VDD＝LHL, RL=470kΩ
‘High’ Output
Delay time
tPLH
CL=100pF,
BD4XXX5G
RL=100kΩ
BD4XXX1G
*1, *2, *3 BD4XXX2G
VDD=VDET-0.2V, VER=0V VDET=2.3V~3.1V *1
Circuit Current
when ON
IDD1
VDD=VDET-0.2V, VER=0V VDET=2.3V~3.1V
VDD=VDET-0.2V, VER=0V VDET=3.2V~4.2V *1
VDD=VDET-0.2V, VER=0V VDET=3.2V~4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V~4.8V *1
VDD=VDET-0.2V, VER=0V VDET=4.3V~4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V~3.1V *1
Circuit Current
when OFF
IDD2
VDD=VDET+0.2V, VER=0V VDET=2.3V~3.1V
VDD=VDET+0.2V, VER=0V VDET=3.2V~4.2V *1
VDD=VDET+0.2V, VER=0V VDET=3.2V~4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V~4.8V *1
Operating Voltage Range
‘High’ Output Current
VOPL
IOH
VDD=VDET+0.2V, VER=0V VDET=4.3V~4.8V
VOL≤0.4V, RL=470kΩ, Ta=25~105°C
VOL≤0.4V, RL=470kΩ, Ta=-40~25°C
VDS=0.5V,VDD=6.0V,VDET≥4.3V
‘Low’Output Current (Nch)
IOL
VDS=0.5V, VDD=1.2V
VDS=0.5V, VDD=2.4V VDET=2.7V~4.8V
Leak Current when OFF
Ileak VDD=VDS=10V
*1
ER Pin ‘H’ Voltage
VEH
*1
ER Pin ‘L’ Voltage
VEL
*1
ER Pin Input Current
IEL
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)(VDET(T)+0.5V)
*3 tPLH:VDD=Please set up the rise up time between VDD=0VDET more than 100µs.
Attention: Please connect the GND when you don’t use ‘ER’
Limit
Unit
Min.
Typ.
Max.
VDET(T)
×0.99
VDET(T)
VDET(T)
×1.01
V
-
±100 ±360 ppm/°C
VDET(T) VDET(T) VDET(T)
V
×0.03 ×0.05 ×0.08
45
50
55
90
100
110
ms
180
200
220
-
0.70
2.10
-
0.70
2.85
-
0.75
2.25
-
0.75
3.00
µA
-
0.80
2.40
-
0.80
3.15
-
0.75
2.25
-
0.75
4.28
-
0.80
2.40
µA
-
0.80
4.50
-
0.85
2.55
-
0.85
4.73
0.95
-
1.20
-
-
-
V
1.2
2.7
-
mA
0.4
1.2
2.0
5.0
-
mA
-
-
-
0.1
µA
2.0
-
-
V
-
-
0.8
V
-
1
10
µA
www.rohm.com
2/9
© 2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.C
Share Link: 