MTP3055E 查看數據表（PDF） - New Jersey Semiconductor
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MTP3055E Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
td(on)
tr
td(off)
tf
Q9
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VOD = 30 V I D = 7 A
R G = 50 £J V G S = 10 V
(see test circuit)
I D = 12 A VGS = 10 V
VDD = 40 V
(see test circuit)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(')
Source-drain Current
Source-drain Current
(pulsed)
VSD (») Forward On Voltage
ISD = 12 A VGS =0
trr
Reverse Recovery
Time
ISD = 12 A
VDD = 30 V
Qrr
Reverse Recovery
Charge
) Pulsed: Pulse duration = 300 us, duty cycle 1.5%
(•) Pulse width limited by safe operating area
di/dt = 100 A/us
Tj = 150 °C
MTP3055E
Min.
Typ.
20
65
70
35
15
7
5
Max.
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max. LUnit
12
A
48
A
2.0
V
65
ns
0.17
uC
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