NCV8403STT3G(2010) 查看數據表（PDF） - ON Semiconductor
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NCV8403STT3G
(Rev.:2010)
(Rev.:2010)
ON Semiconductor
NCV8403STT3G Datasheet PDF : 12 Pages
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NCV8403
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
RDS(on)
VSD
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (20% VDS to 50% VDS)
Slew−Rate OFF (80% VDS to 50% VDS)
VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
tON
tOFF
tON
tOFF
−dVDS/dtON
dVDS/dtOFF
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
VGS = 5.0 V, VDS = 10 V
ILIM
VGS = 5.0 V, TJ = 150°C (Note 3)
Current Limit
VGS = 10 V, VDS = 10 V
ILIM
VGS = 10 V, TJ = 150°C (Note 3)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
VGS = 5.0 Vdc (Note 3)
VGS = 5.0 Vdc
VGS = 10 Vdc (Note 3)
VGS = 10 Vdc
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
VGS = 5 V ID = 1.0 A
VGS = 10 V ID = 1.0 A
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
VGS = 5 V, VDS = 10 V
IGON
IGCL
IGTL
VGS = 10 V, VDS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Electro−Static Discharge Capability
Machine Model (MM)
ESD
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
Min
42
40
−
−
−
1.0
−
−
−
−
−
−
10
5.0
12
8.0
150
−
150
−
4000
400
Typ
46
45
0.6
2.5
50
1.7
5.0
53
95
63
105
0.95
44
84
15
116
2.43
0.83
15
10
17
13
175
15
165
15
50
400
0.1
0.6
0.45
1.5
−
−
Max Unit
51
Vdc
51
Vdc
mAdc
5.0
−
125 mAdc
2.2
Vdc
− mV/°C
mW
68
123
mW
76
135
1.1
V
ms
V/ms
20
Adc
15
22
Adc
18
200
°C
−
°C
185
°C
−
°C
mA
mA
mA
−
V
−
V
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