MUN5215DW1 查看數據表（PDF） - ON Semiconductor

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MUN5215DW1

Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = ∞ kΩ

ON Semiconductor 

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6

ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

−

100

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

−

500

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

−

0.9

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

−

Collector−Emitter Breakdown Voltage (Note 6)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

−

ON CHARACTERISTICS

DC Current Gain (Note 6)

(IC = 5.0 mA, VCE = 10 V)

hFE

160

350

−

Collector−Emitter Saturation Voltage (Note 6)

(IC = 10 mA, IB = 1.0 mA)

VCE(sat)

−

−

0.25

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

0.6

−

Input Voltage (on)

(VCE = 0.2 V, IC = 10 mA)

Vi(on)

−

1.4

−

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

−

0.2

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

VOH

4.9

−

−

Input Resistor

R1

7.0

10

13

Resistor Ratio

6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

R1/R2

−

−

−

Unit

nAdc

nAdc

mAdc

Vdc

Vdc

Vdc

Vdc

Vdc

Vdc

Vdc

kW

400

350

300

250

200

(1) (2) (3)

150

(1) SOT−363; 1.0 x 1.0 inch Pad

(2) SOT−563; Minimum Pad

(3) SOT−963; 100 mm2, 1 oz. copper trace

100

50

0

−50 −25

0 25 50 75 100 125 150

AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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