SF101C 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.

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SF101C

10.0 Ampere Heatsink Dual Common Cathode Super Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

SF101C thru SF108C

SF101C thru SF108C

Pb

Pb Free Plating Product

10.0 Ampere Heatsink Dual Common Cathode Super Fast Recovery Rectifiers

Features

※ Fast switching for high efficiency

※ Low forward voltage drop

※ High current capability

※ Low reverse leakage current

※ High surge current capability

TO-220AB(TO-220-3L)

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit:inch(mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

Mechanical Data

※ Case: TO-220AB Open Metal Heatsink Package

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

※ Weight: 2.2 gram approximately

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Positive

Common Cathode

Suffix "C"

Case

Negative

Common Anode

Suffix "A"

Case

Doubler

Tandem Polarity

Suffix "D"

Case

Series

Tandem Polarity

Suffix "S"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

PARAMETER

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current Tc=100 ℃

(Total Device 2x5.0A=10.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Instantaneous Forward Voltage

@5.0A

(Per Diode/Per Leg)

VRRM

VRMS

VDC

IF(AV)

IFSM

VF

SF101C

SF104C

200

140

200

0.98

SF105C

SF106C

400

280

400

10.0

SF107C UNIT

SF108C

600

V

420

V

600

V

A

125

A

1.3

1.7

V

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

IR

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

CJ

RθJC

Operating Junction and Storage

Temperature Range

TJ,TSTG

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

5.0

50

35

65

1.5

-55 to +150

μA

μA

nS

pF

℃/W

℃

Rev.10T

© 1995 Thinki Semiconductor Co., Ltd.

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