STZT2907 查看數據表（PDF） - STMicroelectronics
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STZT2907 Datasheet PDF : 4 Pages
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STZT2907/STZT2907A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-tab • Thermal Resistance Junction-Collecor Tab
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Max
Max
83.3
10
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = rated VCBO
VCB = rated VCBO Tamb = 125 oC
ICEX Collector Cut-off
Current (VBE = 0.5V)
IBEX Base Cut-off Current
(VBE = 0.5V)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
VCE = -30 V for STZT2222A
VCE = -30 V for STZT2222A
IC = -10 µA
IC = -10 mA
for STZT2907
for STZT2907A
V(BR)EBO
VCE(sat)∗
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IE = -10 µA
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFE∗ DC Current Gain
IC = -0.1 mA VCE = -10 V
for STZT2907
for STZT2907A
IC = -1 mA VCE = -10 V
for STZT2907
for STZT2907A
IC = -10 mA VCE = -10 V
for STZT2907
for STZT2907A
IC = -150 mA VCE = -10 V
IC = -500 mA VCE = -10 V
for STZT2907
for STZT2907A
fT
Transition Frequency IC = -10 mA VCE = -10 V f = 100 MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = -10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = -2 V f = 1 MHz
td
Delay Time
tr
Rise Time
IC = -150 mA IB1 = -15 mA
VCC = -30 V
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC = -150 mA IB1 = -IB1 = -15 mA
VCC = -30 V
toff
Turn-off Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-60
-40
-60
-5
35
75
50
100
75
100
100
10
50
200
Typ.
Max.
-20
-10
-50
-50
-0.4
-1.6
-1.3
-2.6
300
8
30
10
40
45
80
30
100
Unit
nA
µA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
2/4
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