PMBFJ309 查看數據表（PDF） - Philips Electronics
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PMBFJ309 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
100
handbook, halfpage
gis, bis
(mS)
10
1
MCD228
bis
gis
handbook1,0h0alfpage
gfs, −bfs
(mS)
10
MCD227
gfs
−bfs
0.1
10
100
1000
f (MHz)
1
10
100
f (MHz)
1000
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.18 Input admittance; typical values.
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.19 Forward transfer admittance; typical values.
handbook1, 0h2alfpage
−brs, −grs
(mS)
10
1
10−1
10−2
10
MCD226
− brs
− grs
100
1000
f (MHz)
100
handbook, halfpage
bos, gos
(mS)
10
1
0.1
10
MCD225
bos
gos
100
f (MHz)
1000
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.20 Reverse transfer admittance; typical values.
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.21 Output admittance; typical values.
1996 Sep 11
10
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