SIHFBC30AL-GE3 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

SIHFBC30AL-GE3

Power MOSFET

Vishay Semiconductors 

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

400

ID

TOP

1.6A

2.3A

BOTTOM 3.6A

300

200

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

VGS

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

740

720

700

680

660

640

0.0

1.0

2.0

3.0

4.0

IAV , Avalanche Current ( A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanache Current

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91109

S11-1052-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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